DOMAIN-WALL MOTION IN RE-TM FILMS WITH DIFFERENT THICKNESS

被引:18
作者
POKHIL, TG
NIKOLAEV, EN
机构
[1] Institute of Energy Problems of Chemical Physics, Russian Academy of Sciences
关键词
D O I
10.1109/20.280962
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A thermally activated domain wall motion was studied in amorphous TbFe films with different thickness. The activation energy of the domain wall displacement process was determined for the films with various composition and thickness; it is about 2.5 eV. The activation volume of this process nonlinearly increases from 2x10(-18) cm3 to 7x10(-18) cm3 as the film thickness increases from 25 nm to 400 nm. The change of the domain shape with the film thickness growth and domain wall coercive force dependence on film thickness are discussed in terms of thermoactivated domain wall motion.
引用
收藏
页码:2536 / 2538
页数:3
相关论文
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