PREPARATION OF SILICON-CARBIDE ALUMINUM NITRIDE CERAMICS USING ORGANOMETALLIC PRECURSORS

被引:41
作者
CZEKAJ, CL
HACKNEY, MLJ
HURLEY, WJ
INTERRANTE, LV
SIGEL, GA
SCHIELDS, PJ
SLACK, GA
机构
[1] RENSSELAER POLYTECH INST,DEPT MAT ENGN,TROY,NY 12181
[2] GE,CTR RES & DEV,SCHENECTADY,NY 12301
关键词
aluminum nitride; precursors; pyrolysis; silicon carbide; solid solutions;
D O I
10.1111/j.1151-2916.1990.tb06518.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Solid solutions of 2H‐SiC/AlN can be prepared at temperatures less than 1600°C by rapid pyrolysis (“hot drop”) of mixtures of [(Me3Si)0.80((CH2=CH)MeSi)1.0(MeHSi)0.35]n (VPS) or [MeHSiCH2]n (MPCS) with [R2AlNH2]3, where R=Et, i‐Bu or simply by slow pyrolysis of the precursor mixture in the case of [Et2AlNH2]3. In contrast, slow pyrolysis of mixtures of VPS or MPCS with [i‐Bu2AlNH2]3 yields a composite of 2H‐AlN and 3C‐SiC at 1600°C, which transforms into a single 2H‐SiC/AlN solid solution on heating to 2000°C. The influences of the nature of the precursor and processing conditions on the structure, composition, and purity of the SiC/AlN materials are discussed. Copyright © 1990, Wiley Blackwell. All rights reserved
引用
收藏
页码:352 / 357
页数:6
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