EFFECTS OF QUANTITATIVE DISORDER ON THE ELECTRONIC-STRUCTURE OF TETRAHEDRALLY-BONDED AMORPHOUS-SEMICONDUCTORS

被引：4

作者：

HAMA, T ^{[1
]}

YONEZAWA, F ^{[1
]}

机构：

[1] KYOTO UNIV,FUNDAMENTAL PHYS RES INST,KYOTO 606,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 29卷 / 04期

关键词：

D O I：

10.1016/0038-1098(79)90574-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied the effects of quantitative disorder on the valence band in the electronic density of states (DOS) of tetrahedrally-bonded amorphous semiconductors on the basis of a simple Weaire-Thorpe model. The coherent potential approximation is applied to the random variation of the transfer integrals V1 and V2 of the model. Our numerical results indicate that it is not always necessary to assume the existence of five-membered rings in order to explain the characteristic features of the DOS. © 1979.

引用

页码：371 / 373

页数：3

共 7 条

[1] THEORY AND PROPERTIES OF RANDOMLY DISORDERED CRYSTALS AND RELATED PHYSICAL SYSTEMS [J].