IMPROVED BOUNDARY-CONDITIONS FOR THE TIME-DEPENDENT SCHRODINGER-EQUATION

被引:19
作者
MAINS, RK
HADDAD, GI
机构
[1] Center for High-Frequency Microelectronics, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor
关键词
D O I
10.1063/1.345203
中图分类号
O59 [应用物理学];
学科分类号
摘要
An improved boundary condition treatment for the time-dependent Schrödinger equation applied to resonant-tunneling diode simulation has been developed. This treatment is half-implicit, or centered in time, and allows larger time steps than the previous explicit treatment. The method does not complicate the time-dependent calculation since the resulting matrix is still tridiagonal.
引用
收藏
页码:591 / 593
页数:3
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