Ordinary Size Effects and Deviations from Matthiessen's Rule in the Resistance of Fine Wires

被引:13
作者
Boughton, R. I. [1 ]
Neighbor, J. E. [1 ]
机构
[1] Northeastern Univ, Dept Phys, Boston, MA 02115 USA
关键词
D O I
10.1007/BF00660066
中图分类号
O59 [应用物理学];
学科分类号
摘要
Contrary to previous statements in the literature, large deviations from Matthiessen's rule in fine wires are to be expected on the basis of a straight-forward solution of the ordinary transport equation, assuming the relaxation-time approximation and imposing the idealized condition of "diffuse" scattering of electrons at the boundaries. Using Chambers' path-integral method to evaluate the current density in a wire of arbitrary cross-sectional shape, the effects of boundary scattering on the resistivity in the regime d less than or similar to 0.1 lambda have been calculated for two model Fermi surface geometries. For the temperature-dependent part of the resistivity, Delta rho(d)(T) rho(d)(T) - rho(d)(0), two distinct types of behavior are found in the alternative cases: (1) for a spherical Fermi surface, Delta rho(d)(T) increases logarithmically with pal(0); (2) for a cylindrical Fermi surface, Delta rho(d)(T) increases essentially linearly with rho(d)(0). [In each case the qualitative dependence of rho(d)(0) on lambda/d is, for practical purposes, "linear." However, the correct value of the product rho(infinity)lambda in the cylindrical case is not simply given in the ordinary way by the slope of an empirical plot of rho(d)(0) vs. d(-1).] A comparison of theoretical results for the two simple models with the published data for indium and gallium shows that the actual temperature-dependent size effects are consistent, both qualitatively and, by a rough estimation, quantitatively, with the expected behavior.
引用
收藏
页码:241 / 270
页数:30
相关论文
共 25 条
  • [1] AZBEL MY, 1962, ZH EKSP TEOR FIZ, V42, P1632
  • [2] SIZE EFFECTS IN RESISTIVITY OF INDIUM WIRES AT4.2DEGREES K
    BATE, RT
    MARTIN, B
    HILLE, PF
    [J]. PHYSICAL REVIEW, 1963, 131 (04): : 1482 - &
  • [3] RESISTANCE AND MAGNETORESISTANCE OF THIN INDIUM WIRES
    BLATT, FJ
    BURMESTE.A
    LAROY, B
    [J]. PHYSICAL REVIEW, 1967, 155 (03): : 611 - &
  • [4] BLATT FJ, 1960, HELV PHYS ACTA, V33, P1007
  • [5] Bowers R., 1968, PHYS REV LETT, V21, P1007
  • [6] SIZE EFFECTS IN ELECTRON TRANSPORT IN METALS
    BRANDLI, G
    OLSEN, JL
    [J]. MATERIALS SCIENCE AND ENGINEERING, 1969, 4 (2-3): : 61 - +
  • [7] BREAKDOWN OF MATTHIESSENS RULE IN ALUMINIUM ALLOYS
    CAPLIN, AD
    RIZZUTO, C
    [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (06): : L117 - &
  • [8] CHAMBERS RG, 1969, PHYS METALS, V1
  • [9] MEAN FREE PATH OF ELECTRONS AND MAGNETOMORPHIC EFFECTS IN SMALL SINGLE CRYSTALS OF GALLIUM .2.
    COCHRAN, JF
    YAQUB, M
    [J]. PHYSICAL REVIEW, 1965, 140 (6A): : 2174 - &
  • [10] THE ELECTRICAL CONDUCTIVITY OF THIN WIRES
    DINGLE, RB
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1950, 201 (1067): : 545 - 560