GRAIN-SIZE DEPENDENCE IN A SELF-IMPLANTED SILICON LAYER ON LASER IRRADIATION ENERGY DENSITY

被引：36

作者：

TSENG, WF ^{[1
]}

MAYER, JW ^{[1
]}

CAMPISANO, SU ^{[1
]}

FOTI, G ^{[1
]}

RIMINI, E ^{[1
]}

机构：

[1] UNIV CATANIA,IST STRUTTURA MAT,I-95129 CATANIA,ITALY

来源：

关键词：

D O I：

10.1063/1.89938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：824 / 826

页数：3

共 10 条

[1] ANTONENKO AK, 1976, SOV PHYS SEMICOND+, V10, P81
[2] AMORPHOUS-POLYCRYSTAL TRANSITION INDUCED BY LASER-PULSE IN SELF-ION IMPLANTED SILICON
FOTI, G
RIMINI, E
VITALI, G
BERTOLOTTI, M
[J]. APPLIED PHYSICS, 1977, 14 (02): : 189 - 191
[3] FOTI G, 1977, 152ND M EL SOC ATL
[4] FOTI G, UNPUBLISHED
[5] KACHURIN GA, 1976, SOV PHYS SEMICOND, V9, P946
[6] READY JF, 1971, EFFECTS HIGH POWER L, pCH3
[7] SHTYRKOV EI, 1975, SOV PHYS SEMICOND+, V9, P1309
[8] VITALI G, UNPUBLISHED
[9] Zaripov M M, 1976, SOV PHYS USP, V19, P1032
[10] Ziegler J. F., 1974, Atomic Data and Nuclear Data Tables, V13, P463, DOI 10.1016/0092-640X(74)90009-6