THE ELECTRONIC-STRUCTURE AND ATOMIC CONFIGURATION OF HYDROGEN IN SILICON

被引：9

作者：

SASAKI, T ^{[1
]}

KATAYAMAYOSHIDA, H ^{[1
]}

机构：

[1] TOHOKU UNIV,FAC SCI,DEPT PHYS,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1989年 / 58卷 / 05期

关键词：

D O I：

10.1143/JPSJ.58.1685

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1685 / 1693

页数：9

共 32 条

[1] HYDROGEN-ACCEPTOR PAIRS IN SILICON - REPLY [J].

ASSALI, LVC ;

LEITE, JR .

PHYSICAL REVIEW LETTERS, 1986, 56 (04) :403-403

[2] MICROSCOPIC MECHANISM OF HYDROGEN PASSIVATION OF ACCEPTOR SHALLOW LEVELS IN SILICON [J].

ASSALI, LVC ;

LEITE, JR .

PHYSICAL REVIEW LETTERS, 1985, 55 (09) :980-982

[3] PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].

BACHELET, GB ;

HAMANN, DR ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228

[4] ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J].

BARYAM, Y ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW B, 1984, 30 (04) :1844-1852

[5] ANOMALOUS MU+ PRECESSION IN SILICON [J].

BREWER, JH ;

CROWE, KM ;

GYGAX, FN ;

JOHNSON, RF ;

PATTERSON, BD ;

FLEMING, DG ;

SCHENCK, A .

PHYSICAL REVIEW LETTERS, 1973, 31 (03) :143-146

[6] HYDROGEN IN CRYSTALLINE SILICON - A DEEP DONOR [J].

CAPIZZI, M ;

MITTIGA, A .

APPLIED PHYSICS LETTERS, 1987, 50 (14) :918-920

[7] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].

CEPERLEY, DM ;

ALDER, BJ .

PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569

[8] THEORY OF HYDROGEN PASSIVATION OF SHALLOW-LEVEL DOPANTS IN CRYSTALLINE SILICON [J].

CHANG, KJ ;

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1988, 60 (14) :1422-1425

[9] HYDROGEN-ACCEPTOR PAIRS IN SILICON [J].

DELEO, GG ;

FOWLER, WB .

PHYSICAL REVIEW LETTERS, 1986, 56 (04) :402-402

[10] HYDROGEN-ACCEPTOR PAIRS IN SILICON - PAIRING EFFECT ON THE HYDROGEN VIBRATIONAL FREQUENCY [J].

DELEO, GG ;

FOWLER, WB .

PHYSICAL REVIEW B, 1985, 31 (10) :6861-6864

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