MONOLITHIC INTEGRATION OF 1.5-MU-M OPTICAL PREAMPLIFIER AND PIN PHOTODETECTOR WITH A GAIN OF 20 DB AND A BANDWIDTH OF 35 GHZ

被引：22

作者：

WAKE, D

JUDGE, SN

SPOONER, TP

HARLOW, MJ

DUNCAN, WJ

HENNING, ID

OMAHONY, MJ

机构：

[1] British Telecom Research Laboratories, Ipswich, IP5 7RE, Martlesham Heath

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 15期

关键词：

Integrated optics; Photodetectors;

D O I：

10.1049/el:19900754

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The monolithic integration of a semiconductor laser optical preamplifier and an edge-coupled PIN photodiode has been demonstrated for the first time. Although the fabrication involved is relatively simple, a maximum gain (excluding input coupling loss) of 20dB and a 3dB bandwidth of 35 GHz has been measured for this device. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1166 / 1168

页数：3