PHOTOLUMINESCENCE OF A DENSE QUASI-2D ELECTRON-HOLE SYSTEM IN A MODULATION-DOPED HETEROSTRUCTURE WITH STRAINED INGAAS QW

被引：2

作者：

BUTOV, LV ^{[1
]}

KULAKOVSKII, VD ^{[1
]}

ANDERSSON, TG ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL, S-41296 GOTHENBURG, SWEDEN

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1990年 / 159卷 / 01期

关键词：

D O I：

10.1002/pssb.2221590118

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The photoluminescence of dense homogeneous quasi‐2D electron‐hole (e‐h) system in the strained InGaAs QW is investigated for the modulation‐doped n‐AlGaAs‐InGaAs‐GaAs heterostructure under excitation density up to 105 W/cm2 and magnetic field H ≦ 8.3 T. The many body effects are found to become well pronounced in the emission spectra when the concentration of the photoexcited e‐h pairs exceeds the electronic density due to modulation doping (1012 cm−3). There are found and investigated i) the band gap renormalization, ii) the effective mass renormalization, and iii) the change of the damping of one‐particle states in the dense e‐h system. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：165 / 171

页数：7

共 13 条

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