FABRICATION OF GAASP MIS CAPACITORS USING A THERMAL-OXIDATION DIELECTRIC-GROWTH PROCESS

被引：11

作者：

PHILLIPS, DH ^{[1
]}

GRANNEMANN, WW ^{[1
]}

COERVER, LE ^{[1
]}

KUHLMANN, GJ ^{[1
]}

机构：

[1] UNIV NEW MEXICO, ALBUQUERQUE, NM 87106 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 08期

关键词：

D O I：

10.1149/1.2403635

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1087 / 1091

页数：5

共 8 条

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[7] STUDIES OF SILICA-STRUCTURE PHASES - .1., GAPO4, GAASO4, AND GASBO4 [J].

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[8]

ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30

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