CHARACTERIZATION OF GAAS EPITAXIAL LAYERS GROWN IN A RADIATION HEATED MO-CVD REACTOR

被引：25

作者：

BENEKING, H

ESCOBOSA, A

KRAUTLE, H

机构：

来源：

关键词：

D O I：

10.1007/BF02654586

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：473 / 480

页数：8

共 7 条

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DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 473 - 475
[4] ELECTRON-MOBILITY IN VAPOR-GROWN GAAS FILMS
POTH, H
BRUCH, H
HEYEN, M
BALK, P
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) : 285 - 288
[5] RODE DL, 1975, SEMICONDUCTORS SEMIM, V10
[6] ROEHLE H, 1978, I SEMICONDUCTOR ELEC
[7] VANDERPAUW LJ, 1958, PHILIPS RES REPTS, V13