SUB-GAP AND BAND EDGE OPTICAL-ABSORPTION IN A-SI-H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY

被引：36

作者：

JACKSON, WB

AMER, NM

机构：

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:1981461

中图分类号：

学科分类号：

摘要：

引用

页码：293 / 296

页数：4

共 10 条

[1] COHEN JD, 1981, MAR P AIP C TETR BON
[2] COHEN JD, 1981, 9TH P INT C AM LIQ S
[3] PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND DETECTION
JACKSON, WB
AMER, NM
BOCCARA, AC
FOURNIER, D
[J]. APPLIED OPTICS, 1981, 20 (08): : 1333 - 1344
[4] JACKSON WB, UNPUB PHYS REV LETT
[5] JACKSON WB, 1981, MAR P AIP C TETR BON
[6] THEORETICAL CALCULATIONS OF DEFECT STATES IN AMORPHOUS-SEMICONDUCTORS
JOANNOPOULOS, JD
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 781 - 792
[7] INVESTIGATION OF AMORPHOUS-SILICON BARRIER AND P-N-JUNCTION
SPEAR, WE
LECOMBER, PG
SNELL, AJ
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (03): : 303 - 317
[8] A PHYSICAL INTERPRETATION OF DISPERSIVE TRANSPORT IN DISORDERED SEMICONDUCTORS
TIEDJE, T
ROSE, A
[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (01) : 49 - 52
[9] WAKE DR, UNPUB
[10] YASA ZA, UNPUB APPL OPT