ELECTRON-BEAM DUV INTRA-LEVEL MIX-AND-MATCH LITHOGRAPHY FOR RANDOM LOGIC 0.25-MU-M CMOS

被引：7

作者：

JONCKHEERE, R

TRITCHKOV, A

VANDRIESSCHE, V

VANDENHOVE, L

机构：

[1] IMEC vzw, B-3001 Leuven

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)00095-C

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose the combination of an electron beam system in mix-and-match with a DUV stepper on the same resist layer (intra-level mix-and-match) as an extension of available DUV equipment for the investigation and process development for newer CMOS generations. Practical results are presented for the gate exposure of a random logic 0.25mum CMOS design. Feasibility of a similar approach for the contact hole definition is shown.

引用

页码：231 / 234

页数：4