BEAM STEERABLE SEMICONDUCTOR-LASERS WITH LARGE STEERING RANGE AND RESOLVABLE SPOTS

被引：14

作者：

SUN, Y ^{[1
]}

FRANCIS, DA ^{[1
]}

BIELLAK, SA ^{[1
]}

SIEGMAN, AE ^{[1
]}

CHANGHASNAIN, CJ ^{[1
]}

机构：

[1] STANFORD UNIV,CTR INTEGRATED SYST,STANFORD,CA 94305

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 24期

关键词：

SEMICONDUCTOR LASER ARRAYS; LASERS;

D O I：

10.1049/el:19941406

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel method for achieving quasicontinuous broad angle beam steering, based on angling the mirror facets with a dry etching technique, is demonstrated. 80 degrees of far-field scanning with 11 diffraction limited resolvable spots, each independently addressable, is achieved. These represent a three-fold improvement over previous results.

引用

页码：2034 / 2035

页数：2

共 6 条

[1]

BIELLAK SA, 1994, P CLEO ANAHEIM

[2] LATERAL BEAM STEERING IN MUTUAL INJECTION COUPLED Y-BRANCH GRATING-SURFACE-EMITTING DIODE-LASER ARRAYS [J].