PROPERTIES OF SPUTTERED NITRIDE SEMICONDUCTORS

[1] INFRARED LATTICE VIBRATION OF VAPOUR-GROWN AIN [J]. SOLID STATE COMMUNICATIONS, 1967, 5 (11) : 851 - +

[2] BROUT R, 1959, PHYS REV, V114, P43

[3] COX GA, 1968, J PHYS CHEM SOLIDS, V28, P543

[4] DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (03) : 175 - &

[5] SPACE CHARGE CONDUCTION AND ELECTRICAL BEHAVIOUR OF ALUMINIUM NITRIDE SINGLE CRYSTALS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (05) : 99 - 100

[6] FOLEY CP, 1984, 3RD P INT C SEM 3 5, P497

[7] FOLEY CP, 1985, APPL SURF SCI, V23, P804

[8] VARIATION OF LATTICE-PARAMETERS IN GAN WITH STOICHIOMETRY AND DOPING [J]. PHYSICAL REVIEW B, 1979, 19 (06): : 3064 - 3070

[9] DIELECTRIC-PROPERTIES OF REACTIVELY SPUTTERED GALLIUM NITRIDE FILMS [J]. THIN SOLID FILMS, 1981, 83 (01) : L137 - L139

[10] OPTICAL STUDIES OF PHONONS AND ELECTRONS IN GALLIUM NITRIDE [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (15) : 1227 - +

[1] INFRARED LATTICE VIBRATION OF VAPOUR-GROWN AIN [J]. SOLID STATE COMMUNICATIONS, 1967, 5 (11) : 851 - +

[2] BROUT R, 1959, PHYS REV, V114, P43

[3] COX GA, 1968, J PHYS CHEM SOLIDS, V28, P543

[4] DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (03) : 175 - &

[5] SPACE CHARGE CONDUCTION AND ELECTRICAL BEHAVIOUR OF ALUMINIUM NITRIDE SINGLE CRYSTALS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (05) : 99 - 100

[6] FOLEY CP, 1984, 3RD P INT C SEM 3 5, P497

[7] FOLEY CP, 1985, APPL SURF SCI, V23, P804

[8] VARIATION OF LATTICE-PARAMETERS IN GAN WITH STOICHIOMETRY AND DOPING [J]. PHYSICAL REVIEW B, 1979, 19 (06): : 3064 - 3070

[9] DIELECTRIC-PROPERTIES OF REACTIVELY SPUTTERED GALLIUM NITRIDE FILMS [J]. THIN SOLID FILMS, 1981, 83 (01) : L137 - L139

[10] OPTICAL STUDIES OF PHONONS AND ELECTRONS IN GALLIUM NITRIDE [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (15) : 1227 - +