OPTICAL-PROPERTIES OF CUINSE2 FILMS NEAR THE FUNDAMENTAL ABSORPTION-EDGE

被引：12

作者：

CHATTOPADHYAY, KK ^{[1
]}

SANYAL, I ^{[1
]}

BHATTACHARYA, SK ^{[1
]}

CHAUDHURI, S ^{[1
]}

PAL, AK ^{[1
]}

机构：

[1] CENT GLASS & CERAM RES INST,CALCUTTA 700032,W BENGAL,INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 125卷 / 02期

关键词：

D O I：

10.1002/pssa.2211250229

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical transitions near the fundamental band edge are studied for CuInSe2 films having different Cu/In ratios by analysing the variations of the absorption coefficient (alpha) with incident photon energy. The results indicate allowed direct transitions at 0.986 to 1.075 eV depending upon the Cu/In ratio. The band gap shifts towards lower energy for increasing copper content in the films. There are indications of forbidden direct transitions at energies 0.81 to 0.89 eV.

引用

页码：707 / 714

页数：8

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