ELECTRON-SPIN-RESONANCE STUDIES OF TRANSITION-METAL DEEP LEVEL IMPURITIES IN SIC

被引：57

作者：

MAIER, K ^{[1
]}

SCHNEIDER, J ^{[1
]}

WILKENING, W ^{[1
]}

LEIBENZEDER, S ^{[1
]}

STEIN, R ^{[1
]}

机构：

[1] SIEMENS AG,CORP RES LAB,W-8520 ERLANGEN,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 11卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(92)90183-A

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By electron spin resonance (ESR) and photo-ESR, vanadium has been identified as an electrically amphoteric deep level impurity introducing both donor, D0/D+, and acceptor, A0/A-, states in the band gap of 4H- and 6H-SiC. The vanadium donor level in 6H-SiC has been located by photo-ESR near midgap, E(v) + 1.6 eV. Omnipresent titanium impurities were found to form complexes with nitrogen donors; the corresponding donor level of the (TiN) pair in 6H-SiC occurs at E(c) - 0.6 eV.

引用

页码：27 / 30

页数：4