REAL-TIME INSITU MONITORING OF ANTIREFLECTION COATINGS FOR SEMICONDUCTOR-LASER AMPLIFIERS BY ELLIPSOMETRY

被引：12

作者：

WU, IF ^{[1
]}

RIANT, I ^{[1
]}

VERDIELL, JM ^{[1
]}

DAGENAIS, M ^{[1
]}

机构：

[1] UNIV MARYLAND,JOINT PROGRAM ADV ELECTR MAT,COLL PK,MD 20742

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.157125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Very strict requirements need to be met for producing a high-quality single-layer antireflection coating on- a traveling-wave laser amplifier facet. In order to obtain a facet reflectivity of 10(-4) or less, the index of refraction and the layer thickness of single-layer coatings have to be controlled to better than 0.03 and 30 angstrom, respectively. We demonstrate an innovative approach to highly controlled antireflection layer deposition based on in situ real-time ellipsometry. Index control within +/-0.01 and a facet reflectivity of order 10(-4) are reproducibly obtained.

引用

页码：991 / 993

页数：3

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