PN JUNCTION FORMATION IN CDTE BY ION-IMPLANTATION AND PULSED RUBY-LASER ANNEALING

被引：11

作者：

NORRIS, CB ^{[1
]}

WESTMARK, CI ^{[1
]}

ENTINE, G ^{[1
]}

LIS, SA ^{[1
]}

SERREZE, HB ^{[1
]}

机构：

[1] RADIAT MONITORING DEV,WATERTOWN,MA 02172

来源：

RADIATION EFFECTS LETTERS | 1981年 / 58卷 / 3-4期

关键词：

D O I：

10.1080/01422448108228605

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：115 / 117

页数：3

共 8 条

[1] AGRINSKAYA NV, 1972, SOV PHYS SEMICOND+, V6, P407
[2] AGRINSKAYA NV, 1971, P INT S CDTE
[3] ARKADEVA EN, 1975, SOV PHYS SEMICOND+, V9, P563
[4] BEAN JC, 1976, THESIS STANFORD U
[5] PHOTO-VOLTAIC PROPERTIES OF CDTE P-N-JUNCTIONS PRODUCED BY ION-IMPLANTATION
CHU, M
FAHRENBRUCH, AL
BUBE, RH
GIBBONS, JF
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) : 322 - 326
[6] TYPE CONVERSION AND P-N JUNCTIONS IN N-CDTE PRODUCED BY ION IMPLANTATION
DONNELLY, JP
FOYT, AG
HINKLEY, ED
LINDLEY, WT
DIMMOCK, JO
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (09) : 303 - &
[7] JOHNSON WS, 1973, PROJECTED RANGE STAT
[8] CATHODOLUMINESCENCE STUDIES OF ANOMALOUS ION-IMPLANTATION DEFECT INTRODUCTION IN CDTE
NORRIS, CB
BARNES, CE
ZANIO, KR
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) : 1659 - 1667