SPIN-DEPENDENT TRANSMISSION AT FERROMAGNET SEMICONDUCTOR INTERFACES

被引:20
作者
PRINS, MWJ [1 ]
ABRAHAM, DL [1 ]
VANKEMPEN, H [1 ]
机构
[1] CATHOLIC UNIV NIJMEGEN,MAT RES INST,6525 ED NIJMEGEN,NETHERLANDS
关键词
D O I
10.1016/0304-8853(93)91172-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have measured the polarization-dependent photoresponse of ferromagnet-insulator-(III-V) semiconductor thin film tunnel structures as a function of wavelength. When the structures have no interfacial barrier, we find that the response agrees well with calculations of magneto-optical transmission through the magnetic overlayer. However, when a tunnel barrier is present and the excitation is nearly resonant with the semiconductor bandgap, we observe significant deviations from the magneto-optical effects. These deviations are attributed to spin-dependent electron transmission from the III-V semiconductor acting as a spin-polarized source of tunneling electrons.
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页码:152 / 155
页数:4
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