IMAGING OF HIGH-FIELD REGIONS IN SEMIINSULATING GAAS UNDER BIAS

被引：36

作者：

BERWICK, K

BROZEL, MR

BUTTAR, CM

COWPERTHWAITE, M

SELLIN, P

HOU, Y

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,CTR ELECTR MAT,MANCHESTER M60 1QD,LANCS,ENGLAND

[2] UNIV SHEFFIELD,DEPT PHYS,SHEFFIELD S3 7RH,S YORKSHIRE,ENGLAND

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期

关键词：

ELECTRIC FIELD; PARTICLE DETECTOR; GALLIUM ARSENIDE; IMAGING;

D O I：

10.1016/0921-5107(94)90111-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electric field within high energy particle detectors fabricated from semi-insulating GaAs is non-uniform. Two methods which map the electric field within these detectors are compared. The data obtained by these techniques are self consistent and their application should prove useful in assessing the properties of these and similar detectors.

引用

页码：485 / 487

页数：3

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