CHARACTERIZATION OF DIAMOND SINGLE-CRYSTALS BY MEANS OF DOUBLE-CRYSTAL X-RAY-DIFFRACTION AND POSITRON-ANNIHILATION

被引:7
作者
FUJII, S [1 ]
NISHIBAYASHI, Y [1 ]
SHIKATA, S [1 ]
UEDONO, A [1 ]
TANIGAWA, S [1 ]
机构
[1] UNIV TSUKUBA,INST MAT SCI,TSUKUBA,IBARAKI 305,JAPAN
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1995年 / 61卷 / 03期
关键词
61.72.Ji;
D O I
10.1007/BF01538199
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The crystallinity of synthesized and natural crystals of diamond was characterized by double-crystal X-ray diffraction and positron annihilation. The two-dimensional angular correlation of annihilation radiation and positron lifetime measurements revealed that in natural crystals positroniums are formed in a high fraction. The synthesized crystal Ib showed both an extremely small width for the diffraction and a positron lifetime spectrum with a single component of the lifetime of 115 ps. In contrast, the natural diamonds contain a long-lived component of lifetime longer than 2 ns. The diffusion length of positrons was also measured by a variable-energy positron beam. In the synthesized crystal IIa, a diffusion length of about 100.8 nm was observed.
引用
收藏
页码:331 / 333
页数:3
相关论文
共 8 条
[1]  
BOGDANOV AV, 1982, SOV PHYS SEMICOND+, V16, P720
[2]   DEFECT CHARACTERIZATION IN DIAMONDS BY MEANS OF POSITRON-ANNIHILATION [J].
DANNEFAER, S ;
MASCHER, P ;
KERR, D .
DIAMOND AND RELATED MATERIALS, 1992, 1 (5-6) :407-410
[3]   SPIN-DEPENDENT 3-DIMENSIONAL ELECTRON MOMENTUM DENSITY STUDIES IN FERROMAGNETIC CO BY MEANS OF FULL-SCALE USE OF A 2-DIMENSIONAL ANGULAR-CORRELATION OF POLARIZED POSITRON-ANNIHILATION RADIATION [J].
KONDO, H ;
KUBOTA, T ;
NAKASHIMA, H ;
KAWANO, T ;
TANIGAWA, S .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (19) :4595-4611
[4]  
KONOROVA EA, 1983, SOV PHYS SEMICOND+, V17, P146
[5]  
NISHIBAYASHI N, 1993, 3RD P IUMRS
[6]   SCREENING OF POSITRONS IN SEMICONDUCTORS AND INSULATORS [J].
PUSKA, MJ ;
MAKINEN, S ;
MANNINEN, M ;
NIEMINEN, RM .
PHYSICAL REVIEW B, 1989, 39 (11) :7666-7679
[7]   HIGH-VOLTAGE SCHOTTKY DIODES ON BORON-DOPED DIAMOND EPITAXIAL-FILMS [J].
SHIOMI, H ;
NISHIBAYASHI, Y ;
FUJIMORI, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12) :L2163-L2164
[8]  
TANIGAWA S, 1990, DEFECT CONTROL SEMIC, P1573