CUBIC BORON-NITRIDE FILMS GROWN BY LOW-ENERGY B+ AND N+ ION-BEAM DEPOSITION

被引：89

作者：

HOFSASS, H ^{[1
]}

RONNING, C ^{[1
]}

GRIESMEIER, U ^{[1
]}

GROSS, M ^{[1
]}

REINKE, S ^{[1
]}

KUHR, M ^{[1
]}

机构：

[1] UNIV KASSEL,D-34109 KASSEL,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 01期

关键词：

D O I：

10.1063/1.115487

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the growth and the properties of BN films prepared by exclusive deposition of mass separated 11B+ and 14N+ ions. BN films grown with ion energies of 500 eV and at substrate temperatures of 350°C show the IR absorption peak at 1080 cm-1, characteristic for c-BN. These films are nearly stoichiometric and, with transmission electron diffraction, the presence of c-BN nanocrystals was revealed. We compare the growth conditions for ion beam deposition on BN, CN, and diamondlike carbon and propose that the nucleation of nanocrystalline c-BN is related to the ionicity of the BN bond.© 1995 American Institute of Physics.

引用

页码：46 / 48

页数：3

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[1] BONDING AND IONICITY IN SEMICONDUCTORS [J].