SPECTRAL BAND HOMOGENEOUS BROADENING AND NARROW-BAND EMISSION OF ALGAAS-GAAS INJECTION-LASERS

被引：12

作者：

BACHERT, H ^{[1
]}

BOGATOV, AP ^{[1
]}

ELISEEV, PG ^{[1
]}

KEIPER, A ^{[1
]}

KHAIRETDINOV, KA ^{[1
]}

机构：

[1] PN LEBEDEV PHYS INST,MOSCOW,USSR

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1979年 / 15卷 / 08期

关键词：

D O I：

10.1109/JQE.1979.1070075

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of double-grating and single-grating external cavities on the spontaneous and stimulated emission of an injection laser has been investigated. The experiments show that homogeneous broadening is evident in semiconductor lasers. High resolution spectroscopic measurements indicate that single frequency emission is possible. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：786 / 790

页数：5

共 7 条

[1]

BACHERT H, 1978, KVANTOVAYA ELEKTRONI, V8, P603

[2] ANOMALOUS INTERACTION OF SPECTRAL MODES IN A SEMICONDUCTOR LASER [J].