METALLIC COMPOUNDS OF NICKEL AND GALLIUM ON GAAS BY CODEPOSITION IN ULTRAHIGH-VACUUM

被引:4
作者
BALLINI, Y
GUIVARCH, A
CAULET, J
CHOMETTE, A
LEMERDY, B
机构
来源
REVUE DE PHYSIQUE APPLIQUEE | 1989年 / 24卷 / 01期
关键词
D O I
10.1051/rphysap:0198900240107100
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:71 / 78
页数:8
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共 15 条
[1]   PHASE-EQUILIBRIA IN METAL-GALLIUM-ARSENIC SYSTEMS - THERMODYNAMIC CONSIDERATIONS FOR METALLIZATION MATERIALS [J].
BEYERS, R ;
KIM, KB ;
SINCLAIR, R .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) :2195-2202
[2]   COBALT-GALLIUM AND NICKEL-GALLIUM BINARY-SYSTEMS - COMPARATIVE-STUDY [J].
FESCHOTTE, P ;
EGGIMANN, P .
JOURNAL OF THE LESS-COMMON METALS, 1979, 63 (01) :15-30
[3]  
GUERIN R, UNPUB J APPL PHYS
[4]   GROWTH OF ALPHA-RH2AS ON GAAS(001) IN A MOLECULAR-BEAM EPITAXY SYSTEM [J].
GUIVARCH, A ;
SECOUE, M ;
GUENAIS, B ;
BALLINI, Y ;
BADOZ, PA ;
ROSENCHER, E .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) :683-687
[5]   GROWTH OF RHGA ON GAAS (001) IN A MOLECULAR-BEAM EPITAXY SYSTEM [J].
GUIVARCH, A ;
SECOUE, M ;
GUENAIS, B .
APPLIED PHYSICS LETTERS, 1988, 52 (12) :948-950
[6]   EPITAXIAL, THERMODYNAMICALLY STABILIZED METAL III-V COMPOUND SEMICONDUCTOR INTERFACE - NIGA ON GAAS (001) [J].
GUIVARCH, A ;
GUERIN, R ;
SECOUE, M .
ELECTRONICS LETTERS, 1987, 23 (19) :1004-1005
[7]  
GUIVARCH A, UNPUB J APPL PHYS
[8]   AUGA2 ON GASB(001) - AN EPITAXIAL, THERMODYNAMICALLY STABILIZED METAL III-V-COMPOUND SEMICONDUCTOR INTERFACE [J].
LINCE, JR ;
WILLIAMS, RS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1217-1220
[9]   COMPARISON OF CHEMICALLY INERT AND REACTIVE METAL COMPOUND-SEMICONDUCTOR INTERFACES - AUGA2 AND GOLD ON GASB(001) [J].
LINCE, JR ;
WILLIAMS, RS .
THIN SOLID FILMS, 1986, 137 (02) :251-265
[10]   EPITAXIAL-GROWTH OF GAAS/NIAL/GAAS HETEROSTRUCTURES [J].
SANDS, T ;
HARBISON, JP ;
CHAN, WK ;
SCHWARZ, SA ;
CHANG, CC ;
PALMSTROM, CJ ;
KERAMIDAS, VG .
APPLIED PHYSICS LETTERS, 1988, 52 (15) :1216-1218