CALCULATION OF DENSITY OF PEROXYL BONDS IN SIO2

被引:1
作者
ARAUJO, R
机构
[1] Corning Incorporated, Corning
关键词
D O I
10.1016/0022-3093(91)90470-Q
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The density of silicon-silicon bonds and of peroxyl bonds in silica was calculated for a simple model. The calculated density of peroxyl bonds was much lower than the value extracted from a hydrogenation experiment. Explanations of the discrepancy are discussed.
引用
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页码:326 / 327
页数:2
相关论文
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[1]   RADIATION EFFECTS IN HYDROGEN-IMPREGNATED VITREOUS SILICA [J].
SHELBY, JE .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3702-3707