PROCESS LATITUDE OF POSITIVE AND NEGATIVE RESIST SYSTEMS FOR DIRECT WRITE EBEAM LITHOGRAPHY

被引：1

作者：

HINTERMAIER, M

FRANOSCH, M

KNAPEK, E

STEMMER, A

机构：

[1] Siemens AG, Corporate Research and Development Otto-Hahn-Ring 6

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90058-L

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of commercially available novolak based Ebeam resists has been characterized: SYSTEM-9 a positive tone and SAL601-ER7 a negative tone resist. The commonly used PMMA for high resolution and high fidelity patterning can be replaced by SYSTEM-9. Both new resists are suitable for direct write as well as for sub-mu-m mask fabrication and have a good dry etch resistance in RIE environments.

引用

页码：105 / 108

页数：4