CHEMISTRY AND PROCESS FOR DEEP-UV RESISTS

被引：3

作者：

REICHMANIS, E

THOMPSON, LE

机构：

[1] AT and T Bell Laboratories, 600 Mountain Avenue, Murray Hill

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 14卷 / 3-4期

关键词：

LITHOGRAPHY; MATERIALS; SHORT-WAVELENGTH RESISTS; CHEMICAL AMPLIFICATION;

D O I：

10.1016/0167-9317(91)90007-Z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Deep-UV lithography is believed by many to be the "heir-apparent" to g- and/or i-line photolithography for manufacturing devices with features as small as 0.25-mu-m. The ultimate success and degree of acceptance of deep-UV depends on many technical as well as economic factors. Central to this is the availability of a robust resist that meets the process, hardware and economic requirements. The design and development of a chemically amplified deep-UV resist system based on t-butoxycarbonyloxstyrene sulfone/ nitrobenzyl ester chemistry will be described. Other options include the use of multi-level resist schemes and gas-phase functionalization techniques, each of which will be briefly discussed.

引用

页码：215 / 226

页数：12

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