PULSED LASER MODIFICATION OF SIO2-SI INTERFACE PROPERTIES AND MINORITY-CARRIER LIFETIME

被引：9

作者：

DESHMUKH, VGI ^{[1
]}

WEBBER, HC ^{[1
]}

MCCAUGHAN, DV ^{[1
]}

机构：

[1] GEC, HIRST RES CTR, WEMBLEY, ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 03期

关键词：

D O I：

10.1063/1.92676

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：251 / 253

页数：3

共 13 条

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[3]

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[4]

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[5]

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[6]

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[7] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J].

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[8]

HILL C, 1980, P LASER E BEAM PROCE, P26

[9] INTERFACE CHARGES BENEATH LASER-ANNEALED INSULATORS ON SILICON [J].

KAMINS, TI ;

LEE, KF ;

GIBBONS, JF .

SOLID-STATE ELECTRONICS, 1980, 23 (10) :1037-1039

[10] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].

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SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+

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