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CHEMISORPTION AT METAL AND SEMICONDUCTOR SURFACES

被引：1
作者：
FLORES, F
GARCIAVIDAL, FJ
ORTEGA, J
PEREZ, R
机构：
[1] Departamento de Física de la Materia Condensada C-XII, Universidad Autónoma, Madrid
来源：
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1994年 / 69卷 / 05期
关键词：
D O I：
10.1080/01418639408240161
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A free-parameter linear-combination-of-atomic-orbitals method for analysing chemisorption problems is presented. Results for Li chemisorbed on Al(100) and GaAs(110) are presented. Both cases yield similar chemisorption energies, and a charge transfer from Li to the crystal that is never larger than 0.5 electrons. The Schottky-barrier formation for Li on GaAs(110) is also discussed.
引用
收藏
页码：931 / 939
页数：9
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