16 GBIT/S DIRECT MODULATION OF AN INGAASP LASER

被引：13

作者：

GNAUCK, AH

BOWERS, JE

机构：

[1] AT&T Bell Lab, Holmdel, NJ, USA, AT&T Bell Lab, Holmdel, NJ, USA

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 15期

关键词：

MODULATION - MULTIPLEXING - Applications - SEMICONDUCTING INDIUM COMPOUNDS;

D O I：

10.1049/el:19870568

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a 16 Gbit/s electronic multiplexer which is use it to measure the characteristics of a high-speed directly modulated InGaAsP 1. 3 mu m-wavelength laser and a high-speed InGaAs/InP PIN photodetector. The laser rise and fall times are typically 35 ps and 40 ps, respectively. The largest eye opening occurs at an output power of 10 mw with an optical extinction ratio of 2. 3:1.

引用

页码：801 / 803

页数：3

共 8 条

[1] HIGH-SPEED INGAASP CONSTRICTED-MESA LASERS
BOWERS, JE
HEMENWAY, BR
GNAUCK, AH
WILT, DP
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (06) : 833 - 844
[2] IMPROVED VERY-HIGH-SPEED PACKAGED INGAAS PIN PUNCH-THROUGH PHOTODIODE
BURRUS, CA
BOWERS, JE
TUCKER, RS
[J]. ELECTRONICS LETTERS, 1985, 21 (07) : 262 - 263
[3] 8 GBIT/S TRANSMISSION OVER 30-KM OF OPTICAL FIBER
GNAUCK, AH
BOWERS, JE
CAMPBELL, JC
[J]. ELECTRONICS LETTERS, 1986, 22 (11) : 600 - 602
[4] GNAUCK AH, 1986, C OPTICAL FIBER COMM, P39
[5] HIGH-SPEED LARGE-SIGNAL DIGITAL MODULATION OF A 1.3-MUM INGAASP CONSTRICTED MESA LASER AT A SIMULATED BIT RATE OF 16 GBIT/S
LIN, C
BOWERS, JE
[J]. ELECTRONICS LETTERS, 1985, 21 (20) : 906 - 908
[6] NAKAGAWA K, 1986, C OPTICAL FIBER COMM
[7] SINUSOIDAL AND DIGITAL HIGH-SPEED MODULATION OF P-TYPE SUBSTRATE MASS-TRANSPORTED DIODE-LASERS
TSANG, DZ
LIAU, ZL
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (03) : 300 - 304
[8] 8 GBIT/S RETURN-TO-ZERO MODULATION OF A SEMICONDUCTOR-LASER BY GAIN-SWITCHING
TUCKER, RS
WIESENFELD, JM
GNAUCK, AH
BOWERS, JE
[J]. ELECTRONICS LETTERS, 1986, 22 (25) : 1329 - 1331

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