DEPENDENCE OF THE ELECTRICAL-PROPERTIES OF KNO3 MEMORY DEVICES ON FABRICATION AND PROCESSING PARAMETERS

被引：4

作者：

KULKARNI, AK

ROHRER, GA

MCMILLAN, LD

ADAMS, SE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.576077

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1461 / 1466

页数：6

共 18 条

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[4] BURFOOT JC, 1979, POLAR DIELECTRIC THE, P48
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[7] ELECTRICAL-PROPERTIES OF FERROELECTRIC THIN-FILM KNO3 MEMORY DEVICES
KULKARNI, A
ROHRER, G
NARAYAN, S
MCMILLAN, L
[J]. THIN SOLID FILMS, 1988, 164 (339-343) : 339 - 343
[8] KULKARNI AP, IN PRESS
[9] MANSINGH A, 1986, 6TH P IEEE INT S APP, P576
[10] SWITCHING TIME IN FERROELECTRIC BATIO3 AND ITS DEPENDENCE ON CRYSTAL THICKNESS
MERZ, WJ
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