HIGH-POWER OPERATION OF A TRANSVERSE-MODE STABILIZED ALGALNP VISIBLE-LIGHT (LAMBDA-L = 683NM) SEMICONDUCTOR-LASER

被引：32

作者：

FUJII, H

KOBAYASHI, K

KAWATA, S

GOMYO, A

HINO, I

HOTTA, H

SUZUKI, T

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 18期

关键词：

D O I：

10.1049/el:19870661

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：938 / 939

页数：2

相关论文

共 6 条

[1] AGING CHARACTERISTICS OF ALGAINP/GAINP VISIBLE-LIGHT LASERS (LAMBDA-L = 678 NM)
GOMYO, A
KOBAYASHI, K
KAWATA, S
HINO, I
SUZUKI, T
[J]. ELECTRONICS LETTERS, 1987, 23 (02) : 85 - 85
[2] HINO I, 1985, I PHYS C SER, V79, P151
[3] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP MESA STRIPE LASER
IKEDA, M
NAKANO, K
MORI, Y
KANEKO, K
WATANABE, N
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 89 - 91
[4] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
ISHIKAWA, M
OHBA, Y
SUGAWARA, H
YAMAMOTO, M
NAKANISI, T
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (03) : 207 - 208
[5] ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE VISIBLE LASERS
KOBAYASHI, K
KAWATA, S
GOMYO, A
HINO, I
SUZUKI, T
[J]. ELECTRONICS LETTERS, 1985, 21 (20) : 931 - 932
[6] SUZUKI T, 1986, 18TH INT C SOL STAT, P149