CHARACTERISTICS OF FLOATING GATE DEVICE AS ANALOG MEMORY FOR NEURAL NETWORKS

被引：11

作者：

FUJITA, O

AMEMIYA, Y

IWATA, A

机构：

[1] NTT LSI Laboratories, Atsugi-Shi, 3-1, Morinosato Wakamiya, Kanagawa-Pref.

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 11期

关键词：

NEURAL NETWORKS; MEMORIES; FIELD-EFFECT TRANSISTORS;

D O I：

10.1049/el:19910578

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An effective controlling circuit for a floating-gate MOSFET analogue memory used in neural networks is described. It is possible to charge or discharge the floating gate storage with high resolution of more than 1% of full scale. The experimental results are described and discussed. An improved device structure is proposed for simplifying the controlling circuit.

引用

页码：924 / 926

页数：3