THE SIGN OF THE HALL-EFFECT IN AMORPHOUS-SILICON

被引：13

作者：

MOTT, NF

机构：

[1] Cavendish Laboratory, University of Cambridge, Cambridge, CB3 OHE, Madingley Road

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1991年 / 63卷 / 01期

关键词：

D O I：

10.1080/01418639108224426

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is shown that the anomaly in the sign of the Hall coefficient in a-Si:H can be understood if the disorder responsible for the mobility edge is caused by the presence of stretched bonds.

引用

页码：3 / 5

页数：3

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