NUCLEATION AND GROWTH OF CUINSE2 ON A GLASSY-CARBON ELECTRODE

被引：14

作者：

GOMEZ, H ^{[1
]}

SCHREBLER, R ^{[1
]}

CORDOVA, R ^{[1
]}

UGARTE, R ^{[1
]}

DALCHIELLE, EA ^{[1
]}

机构：

[1] UNIV REPUBLICA, FAC INGN, INST FIS, MONTEVIDEO 11000, URUGUAY

来源：

ELECTROCHIMICA ACTA | 1995年 / 40卷 / 02期

关键词：

ELECTROCRYSTALLIZATION MECHANISM; COPPER INDIUM DI-SELENIDE THIN FILM; POTENTIOSTATIC CATHODIC CURRENT TRANSIENTS;

D O I：

10.1016/0013-4686(94)E0079-F

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The nucleation and growth of the ternary semiconductor CuInSe2 on a glassy carbon electrode, has been investigated by running a set of potential step experiments. Reduced variable plots deduced of the i-t transients were compared with theoretical models, allowing us to propose a three dimensional progressive nucleation growth with diffusion control as a possible mechanism.

引用

页码：267 / 269

页数：3

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