SOFT MAGNETIC THIN-FILM MEMORY MATERIALS

被引:7
作者
FREEDMAN, JF
机构
[1] T. J. Watson Research Division, IBM Corporation, N. Y. 10598, Yorktown Heights
关键词
D O I
10.1109/TMAG.1969.1066650
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thin-film deposition techniques as applied to magnetic memory applications are reviewed. The relationship between the microstructure of the film and the fabrication technique and pertinent parameters is discussed in terms of the atomistics of film nucleation and growth. The dependence of the magnetic properties governing switching of a magnetic storage element is qualitatively discussed in terms of the microstructure and ripple theory; literature data is used to elucidate this by showing the effects of com-position, temperature, thickness, and substrate morphology on the magnetic properties. The literature values for the anisotropy field, coercivity field, and dispersion of various classes of ternary alloys is reviewed, extending previous papers reviewing elemental and binary alloys. © 1969 IEEE. All rights reserved.
引用
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页码:752 / +
页数:1
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