MICROWAVE NOISE PERFORMANCE AND FREQUENCY-RESPONSE OF PIN GALNAS PHOTODIODES

被引:3
作者
GOUY, JP
VILCOT, LP
DECOSTER, D
RIGLET, P
PATILLON, JN
MARTIN, G
机构
[1] Centre Hyperfréquences et Semiconducteurs, URA CNRS 287, Université des Sciences et Techniques de Lille‐Flandres‐Artois, Villeneuve D'Ascq
[2] Laboratoires d'Electronique Philips, Limeil Brevannes, 94450
关键词
noise; Optoelectronics; photodiodes;
D O I
10.1002/mop.4650030202
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have measured the noise performance of GaInAs PIN photodiodes in the microwave frequency range. We show that the frequency response of the photodetectors can be deduced from their photocurrent shot noise spectra. The noise level has been measured using a setup which is based on heterodyne microwave mixing. Copyright © 1990 Wiley Periodicals, Inc., A Wiley Company
引用
收藏
页码:47 / 49
页数:3
相关论文
共 3 条
[1]  
Bowers J.H., Burrus C.A., Ultrawide‐band long‐wavelength PIN photodetectors, Journal of Lightwave Technology, 5 LT, 10, pp. 1339-1350, (1987)
[2]  
Sze S.M., Physics of Semiconductor Devices, (1981)
[3]  
van der Ziel A., Noise, (1954)