A HIGH OUTPUT MODE FOR SUBMICRON M-R MEMORY CELLS

被引：4

作者：

POHM, AV

DAUGHTON, JM

SPEARS, KE

机构：

[1] Nonvolatile Electronics. Inc., Plymouth, MN, 55441

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1992年 / 28卷 / 05期

基金：

美国国家航空航天局; 美国国家科学基金会;

关键词：

D O I：

10.1109/20.179490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new mode has been demonstrated which substantially increases the non-destructive read output from submicron M-R memory elements. A +-1.2 mV signal was achieved from elements with an active area of 0.7 x 3.0 microns. A technique using an oxide step also was devised to tailor the required demagnetizing factor for optimum operation.

引用

页码：2356 / 2358

页数：3