EXTRINSIC PHOTOCONDUCTIVE CHARACTERISTICS OF SEMIINSULATING GAAS CRYSTALS

被引：18

作者：

MITA, Y ^{[1
]}

机构：

[1] NEC CORP,OPTOELECTR RES LABS,KAWASAKI,KANAGAWA 213,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 12期

关键词：

D O I：

10.1063/1.338268

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5325 / 5329

页数：5

共 17 条

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KAUFMANN, U .

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[2]

Gatos H. C., 1985, MATER RES SOC S P, V46, P153

[3]

HARIU T, 1987, J APPL PHYS, V61, P1069

[4]

HARIU T, 1986, P C SEMIINSULATING 3, P335

[5]

IKOMA T, 1985, JPN J APPL PHYS 2, V24, pL935, DOI 10.1143/JJAP.24.L935

[6] OPTICAL QUENCHING OF THE NEAR-INTRINSIC PHOTOCURRENT IN SEMI-INSULATING BULK GAAS [J].

JIMENEZ, J ;

HERNANDEZ, P ;

DESAJA, JA ;

BONNAFE, J .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5290-5294

[7] OPTICALLY ENHANCED DEFECT REACTIONS IN SEMI-INSULATING BULK GAAS [J].

JIMENEZ, J ;

GONZALEZ, MA ;

HERNANDEZ, P ;

DESAJA, JA ;

BONNAFE, J .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1152-1160

[8] CHARGE-STATE-CONTROLLED STRUCTURAL RELAXATION OF THE EL2 CENTER IN GAAS [J].

LEVINSON, M .

PHYSICAL REVIEW B, 1983, 28 (06) :3660-3662

[9]

LIN AL, 1976, J APPL PHYS, V47, P1852, DOI 10.1063/1.322904

[10]

MARTIN GM, 1985, DEEP CTR SEMICONDUCT, P399

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