MODEL FOR THE ELECTRIC-FIELDS IN LDD MOSFETS .1. FIELD PEAKS ON THE SOURCE SIDE

[1] HAMAMOTO T, 1986, P VLSI S, P67

[2] MINIMOS-3 - A MOSFET SIMULATOR THAT INCLUDES ENERGY-BALANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (05) : 1074 - 1078

[3] Katto H., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P774

[4] Ko P. K., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P88

[5] Ko P. K., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P292

[6] TWO-DIMENSIONAL PHOSPHORUS DIFFUSION FOR SOFT DRAINS IN SILICON MOS-TRANSISTORS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 40 (02): : 101 - 107

[7] Mizuno T., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P726

[8] MUHLHOFF HM, 1987, P VLSI S, P57

[9] MUHLHOFF HM, 1987, 1ST P INT S ULSI TEC, P632

[10] ORLOWSKI M, 1987, P VLSI S, P51

[1] HAMAMOTO T, 1986, P VLSI S, P67

[2] MINIMOS-3 - A MOSFET SIMULATOR THAT INCLUDES ENERGY-BALANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (05) : 1074 - 1078

[3] Katto H., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P774

[4] Ko P. K., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P88

[5] Ko P. K., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P292

[6] TWO-DIMENSIONAL PHOSPHORUS DIFFUSION FOR SOFT DRAINS IN SILICON MOS-TRANSISTORS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 40 (02): : 101 - 107

[7] Mizuno T., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P726

[8] MUHLHOFF HM, 1987, P VLSI S, P57

[9] MUHLHOFF HM, 1987, 1ST P INT S ULSI TEC, P632

[10] ORLOWSKI M, 1987, P VLSI S, P51