学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
ANOMALOUS LOW-FREQUENCY GRAIN-BOUNDARY CAPACITANCE IN SILICON
被引:44
作者
:
SEAGER, CH
论文数:
0
引用数:
0
h-index:
0
SEAGER, CH
PIKE, GE
论文数:
0
引用数:
0
h-index:
0
PIKE, GE
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1980年
/ 37卷
/ 08期
关键词
:
D O I
:
10.1063/1.92019
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:747 / 749
页数:3
相关论文
共 6 条
[1]
BARRIER MODEL FOR ZNO VARISTORS
HOWER, PL
论文数:
0
引用数:
0
h-index:
0
HOWER, PL
GUPTA, TK
论文数:
0
引用数:
0
h-index:
0
GUPTA, TK
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(07)
: 4847
-
4855
[2]
THEORY OF CONDUCTION IN ZNO VARISTORS
MAHAN, GD
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GE,CORP RES & DEV,SCHENECTADY,NY 12301
MAHAN, GD
LEVINSON, LM
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GE,CORP RES & DEV,SCHENECTADY,NY 12301
LEVINSON, LM
PHILIPP, HR
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GE,CORP RES & DEV,SCHENECTADY,NY 12301
PHILIPP, HR
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(04)
: 2799
-
2812
[3]
DC VOLTAGE DEPENDENCE OF SEMICONDUCTOR GRAIN-BOUNDARY RESISTANCE
PIKE, GE
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
PIKE, GE
SEAGER, CH
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
SEAGER, CH
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(05)
: 3414
-
3422
[4]
GRAIN-BOUNDARY STATES AND VARISTOR BEHAVIOR IN SILICON BICRYSTALS
SEAGER, CH
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
SEAGER, CH
PIKE, GE
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
PIKE, GE
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(09)
: 709
-
711
[5]
DIRECT MEASUREMENT OF ELECTRON-EMISSION FROM DEFECT STATES AT SILICON GRAIN-BOUNDARIES
SEAGER, CH
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
SEAGER, CH
PIKE, GE
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
PIKE, GE
GINLEY, DS
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
GINLEY, DS
[J].
PHYSICAL REVIEW LETTERS,
1979,
43
(07)
: 532
-
535
[6]
GRAIN BOUNDARY BARRIERS IN GERMANIUM
TAYLOR, WE
论文数:
0
引用数:
0
h-index:
0
TAYLOR, WE
ODELL, NH
论文数:
0
引用数:
0
h-index:
0
ODELL, NH
FAN, HY
论文数:
0
引用数:
0
h-index:
0
FAN, HY
[J].
PHYSICAL REVIEW,
1952,
88
(04):
: 867
-
875
←
1
→
共 6 条
[1]
BARRIER MODEL FOR ZNO VARISTORS
HOWER, PL
论文数:
0
引用数:
0
h-index:
0
HOWER, PL
GUPTA, TK
论文数:
0
引用数:
0
h-index:
0
GUPTA, TK
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(07)
: 4847
-
4855
[2]
THEORY OF CONDUCTION IN ZNO VARISTORS
MAHAN, GD
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GE,CORP RES & DEV,SCHENECTADY,NY 12301
MAHAN, GD
LEVINSON, LM
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GE,CORP RES & DEV,SCHENECTADY,NY 12301
LEVINSON, LM
PHILIPP, HR
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CORP RES & DEV,SCHENECTADY,NY 12301
GE,CORP RES & DEV,SCHENECTADY,NY 12301
PHILIPP, HR
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(04)
: 2799
-
2812
[3]
DC VOLTAGE DEPENDENCE OF SEMICONDUCTOR GRAIN-BOUNDARY RESISTANCE
PIKE, GE
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
PIKE, GE
SEAGER, CH
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
SEAGER, CH
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(05)
: 3414
-
3422
[4]
GRAIN-BOUNDARY STATES AND VARISTOR BEHAVIOR IN SILICON BICRYSTALS
SEAGER, CH
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
SEAGER, CH
PIKE, GE
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
PIKE, GE
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(09)
: 709
-
711
[5]
DIRECT MEASUREMENT OF ELECTRON-EMISSION FROM DEFECT STATES AT SILICON GRAIN-BOUNDARIES
SEAGER, CH
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
SEAGER, CH
PIKE, GE
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
PIKE, GE
GINLEY, DS
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
GINLEY, DS
[J].
PHYSICAL REVIEW LETTERS,
1979,
43
(07)
: 532
-
535
[6]
GRAIN BOUNDARY BARRIERS IN GERMANIUM
TAYLOR, WE
论文数:
0
引用数:
0
h-index:
0
TAYLOR, WE
ODELL, NH
论文数:
0
引用数:
0
h-index:
0
ODELL, NH
FAN, HY
论文数:
0
引用数:
0
h-index:
0
FAN, HY
[J].
PHYSICAL REVIEW,
1952,
88
(04):
: 867
-
875
←
1
→