A MICROBEAM ANALYSIS STUDY OF HETEROJUNCTIONS FORMED WITH CUINS2 AND CUINSE2

Heterojunctions have been formed between CdS and silicon with vacuum-deposited and spray deposited CuInS2 and CuInSe2 films. These heterojunctions have been examined by microbeam analysis techniques in the scanning electron microscope. The conditions for formation of homogeneous stoichiometric films of CuInS2 and CuInSe2 have been determined by electron diffraction and X-ray microanalysis. A qualitative measure of the atomic distribution across the junction in heterojunctions formed with these films has been determined by high resolution X-ray microanalysis. The most extensive diffusion was observed to occur in heterojunctions formed between these films and silicon. Measurements of minority carrier diffusion lengths have also been made in these heterojunctions. The largest values were obtained for heterojunctions formed with silicon.