A GENERAL CHARACTERIZATION AND SIMULATION METHOD FOR DEPOSITION AND ETCHING TECHNOLOGY

被引：27

作者：

TAZAWA, S

MATSUO, S

SAITO, K

机构：

[1] NTT LSI Laboratories., Atsugi-shi, Kanagawa Pref., 243-01, 3–1, Morinosato Wakamiya

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 1992年 / 5卷 / 01期

关键词：

539 Metals Corrosion and Protection; Metal Plating - 701 Electricity and Magnetism - 713 Electronic Circuits - 723 Computer Software; Data Handling and Applications - 802 Chemical Apparatus and Plants; Unit Operations; Unit Processes - 921 Mathematics;

D O I：

10.1109/66.121973

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A topography simulation system and a six-parameter unified process model are proposed for general characterization of deposition and etching technology. This system is fit to use experimentally. This model precisely expresses the process characteristics of deposition and etching equipment. A surface movement vector calculation method suitable for the unified process model is also given. This method is used for calculating cross-sectional profiles including convex and concave corners, and for general LSI processes where deposition and etching reactions occur simultaneously. The parameters can be extracted from experimental results. The extraction method is also introduced in this paper. The simulated results agree well with the experimental ones of sputter deposition and Bias-ECR deposition.

引用

页码：27 / 33

页数：7

共 14 条

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