INTRINSIC MECHANISM FOR THE POOR LUMINESCENCE PROPERTIES OF QUANTUM-BOX SYSTEMS

被引:790
作者
BENISTY, H [1 ]
SOTOMAYORTORRES, CM [1 ]
WEISBUCH, C [1 ]
机构
[1] UNIV GLASGOW, DEPT ELECTR & ELECT ENGN, NANOELECTR RES CTR, GLASGOW G12 8QQ, SCOTLAND
关键词
D O I
10.1103/PhysRevB.44.10945
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The poor radiative efficiency in quantum-box luminescence is tentatively explained as an intrinsic effect rather than the usually invoked effect of etch damages. From the recently calculated decreased relaxation rate in zero-dimensional (0D) systems under 100-200-nm lateral quantization, we propose that electrons captured from the barriers in the upper levels of quantum boxes are retained in their cascade to the fundamental states for more than nanoseconds. Due to the mutual orthogonality of quantum states in a box, no luminescence, or much less than in 2D or 3D, can be obtained from these stored electrons with reasonable assumptions for the hole population. Magnetic-confinement experiments in quantum-well lasers support our conclusion. A realistic model at low temperature describes more quantitatively the observed strong decay of the radiative efficiency in quantum boxes and pseudowires with decreased lateral dimensions.
引用
收藏
页码:10945 / 10948
页数:4
相关论文
共 20 条
  • [1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT
    ARAKAWA, Y
    SAKAKI, H
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 939 - 941
  • [2] SPONTANEOUS EMISSION CHARACTERISTICS OF QUANTUM WELL LASERS IN STRONG MAGNETIC-FIELDS - AN APPROACH TO QUANTUM-WELL-BOX LIGHT-SOURCE
    ARAKAWA, Y
    SAKAKI, H
    NISHIOKA, M
    OKAMOTO, H
    MIURA, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12): : L804 - L806
  • [3] ARAKAWA Y, 1983, JPN J APPL PHYS, V22, P804
  • [4] PHOTOLUMINESCENCE OF OVERGROWN GAAS-GAALAS QUANTUM DOTS
    ARNOT, HEG
    WATT, M
    SOTOMAYORTORRES, CM
    GLEW, R
    CUSCO, R
    BATES, J
    BEAUMONT, SP
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (03) : 459 - 463
  • [5] ARNOT HEG, 1989, TECHNICAL DIGEST SER, V10, P83
  • [6] WAVELENGTH AND THRESHOLD CURRENT OF A QUANTUM WELL LASER IN A STRONG MAGNETIC-FIELD
    BERENDSCHOT, TTJM
    REINEN, HAJM
    BLUYSSEN, HJA
    HARDER, C
    MEIER, HP
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (19) : 1827 - 1829
  • [7] PHONON-SCATTERING AND ENERGY RELAXATION IN 2-DIMENSIONAL, ONE-DIMENSIONAL, AND ZERO-DIMENSIONAL ELECTRON GASES
    BOCKELMANN, U
    BASTARD, G
    [J]. PHYSICAL REVIEW B, 1990, 42 (14): : 8947 - 8951
  • [8] GAINASP-INP SINGLE-QUANTUM-WELL (SQW) LASER WITH WIRE-LIKE ACTIVE REGION TOWARDS QUANTUM WIRE LASER
    CAO, M
    DASTE, P
    MIYAMOTO, Y
    MIYAKE, Y
    NOGIWA, S
    ARAI, S
    FURUYA, K
    SUEMATSU, Y
    [J]. ELECTRONICS LETTERS, 1988, 24 (13) : 824 - 825
  • [9] SINGLE QUANTUM WIRE SEMICONDUCTOR-LASERS
    KAPON, E
    SIMHONY, S
    BHAT, R
    HWANG, DM
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (26) : 2715 - 2717
  • [10] DECAY TIMES OF ONE-DIMENSIONAL EXCITONS IN GAAS ALXGA1-XAS QUANTUM-WELL WIRES
    KOHL, M
    HEITMANN, D
    RUHLE, WW
    GRAMBOW, P
    PLOOG, K
    [J]. PHYSICAL REVIEW B, 1990, 41 (17): : 12338 - 12341