A MODEL FOR ANOMALOUS SHORT-CHANNEL BEHAVIOR IN SUBMICRON MOSFETS

被引：24

作者：

HANAFI, HI ^{[1
]}

NOBLE, WP ^{[1
]}

BASS, RS ^{[1
]}

VARAHRAMYAN, K ^{[1
]}

LII, Y ^{[1
]}

DALLY, AJ ^{[1
]}

机构：

[1] IBM CORP,DIV TECHNOL PROD,BURLINGTON,VT 05402

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 12期

关键词：

D O I：

10.1109/55.260794

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports experimental data and simulation results on submicron MOSFET's, which are used to support a physical explanation for two important anomalies in the dependence of device threshold voltage on channel length. The widely observed increase in threshold voltage with decreasing channel length (roll-up), and the more recent observation that the ultimate threshold voltage decrease (roll-off) occurs at a rate which is far in excess of that which can be explained with conventional models of laterally uniform channel doping. A new model is proposed that attributes roll-up as well as roll-off to lateral redistribution of doping near the source and drain junctions. This lateral redistribution is caused by crystal defects formed during post-source / drain-implant anneal. The resulting profile consists of an enhancement of background doping adjacent to the junction edge, bounded by a depression of the doping farther into the channel.

引用

页码：575 / 577

页数：3

共 5 条

[1] MODELING THE ANOMALOUS THRESHOLD VOLTAGE BEHAVIOR OF SUBMICROMETER MOSFETS [J].