APPLICATION OF LIFSHITZ-SLYOZOV THEORY TO PRECIPITATION OF PHOSPHORUS IN SILICON-GERMANIUM THERMOELECTRIC ALLOYS

被引：8

作者：

BURGESS, EL ^{[1
]}

NASBY, RD ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 06期

关键词：

D O I：

10.1063/1.1663600

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2375 / 2381

页数：7

共 14 条

[1]

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MERRILL, RM ;

DOSCH, RG .

ANALYTICA CHIMICA ACTA, 1972, 61 (03) :475-&

[3]

DISMUKES JP, 1965, T METALL SOC AIME, V233, P672

[4] LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J].

DISMUKES, JP ;

PAFF, RJ ;

EKSTROM, L .

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[5] PRECIPITATION OF PHOSPHORUS FROM SOLID SOLUTION IN GE-SI ALLOY [J].

EKSTROM, L ;

DISMUKES, JP .

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[6] THEORY OF DIFFUSION-LIMITED PRECIPITATION [J].

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[7]

LEFEVER R, TO BE PUBLISHED

[8] THE KINETICS OF PRECIPITATION FROM SUPERSATURATED SOLID SOLUTIONS [J].

LIFSHITZ, IM ;

SLYOZOV, VV .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (1-2) :35-50

[9] PRECIPITATION OF DOPANTS IN SILICON-GERMANIUM THERMOELECTRIC ALLOYS [J].

NASBY, RD ;

BURGESS, EL .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2908-&

[10]

RAAG V, 1970, 8 JET PROP LAB RES S

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