PHONON TRAPPING IN THIN METAL-FILMS

被引：7

作者：

NABITY, JC

WYBOURNE, MN

机构：

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.42.9714

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We describe a simple electron-heating experiment in which the phonon escape from thin metal films is changed in situ. This provides clear evidence that the phonon-escape rate can significantly affect electron heating. From the results we have determined that phonon generation by the heated electrons and phonon escape have comparable rates. © 1990 The American Physical Society.

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页码：9714 / 9716

页数：3

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