CONSEQUENCES OF THE COOLING INDUCED BY VOLTAGE TAPS AT THE EXTREMITIES OF ELECTROMIGRATION TEST STRUCTURES

被引:3
作者
JEULAND, F [1 ]
LORMAND, G [1 ]
NORMANDON, P [1 ]
BOUDOU, A [1 ]
机构
[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
关键词
D O I
10.1063/1.351141
中图分类号
O59 [应用物理学];
学科分类号
摘要
The difference between the rupture localizations observed on two types of electromigration test structures, with or without several width variations, is explained by the effect of the cooling due to voltage taps at the extremities of the structures. The influence of this cooling on the ion flow divergence resulting from the thermal gradient at the extremities of the test structures is studied. Whereas a current density acceleration exponent of 3 is found for temperature-gradient-induced failures at moderated current densities, a value of 1 is predicted for high-current-density accelerated tests.
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页码:2015 / 2017
页数:3
相关论文
共 10 条
[1]   ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES [J].
BLACK, JR .
PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1587-&
[2]  
CHHABRA DS, 1967, IBM22 COMP DIV TECHN, P419
[3]  
GHATE PB, 1982, P INT RELIABILITY PH, P292
[4]   CURRENT-INDUCED MARKER MOTION IN GOLD WIRES [J].
HUNTINGTON, HB ;
GRONE, AR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (1-2) :76-87
[5]  
JEULAND F, 1991, THESIS INSA TOULOUSE
[6]  
JEULAND F, 1991, IN PRESS 2ND EUR S R
[7]  
JEULAND F, 1991, 8TH P VLSI MULT INT, P399
[8]  
LLOYD JR, 1988, P IEEE INT REL PHYS, P216
[9]   THERMAL-ANALYSIS OF ELECTROMIGRATION TEST STRUCTURES [J].
SCHAFFT, HA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (03) :664-672
[10]  
Venables J. D., 1972, Proceedings of the 10th Annual Conference on Reliability Physics 1972, P159