OPTICAL MODULATION OF LOW-ENERGY-ELECTRON REFLECTION AND TRANSMISSION AT A SI SURFACE

被引:14
作者
DAHLBERG, SC
机构
来源
PHYSICAL REVIEW B | 1978年 / 17卷 / 12期
关键词
D O I
10.1103/PhysRevB.17.4757
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:4757 / 4764
页数:8
相关论文
共 23 条
[1]  
ARSENEVA.AN, 1965, FIZ TVERD TELA+, V7, P952
[2]  
BRUINING CH, 1954, PHYSICS APPLICATIONS
[3]   ROLE OF PLASMON DECAY IN SECONDARY-ELECTRON EMISSION IN NEARLY-FREE-ELECTRON METALS - APPLICATION TO ALUMINUM [J].
CHUNG, MS ;
EVERHART, TE .
PHYSICAL REVIEW B, 1977, 15 (10) :4699-4715
[4]   PHOTOVOLTAGE STUDIES OF CLEAN AND OXYGEN COVERED GALLIUM-ARSENIDE [J].
DAHLBERG, SC .
SURFACE SCIENCE, 1976, 59 (01) :83-96
[5]  
DAHLBERG SC, UNPUBLISHED
[6]  
DEKKER AJ, 1958, SOLID STATE PHYS, V6, P251
[7]   EFFECTS OF SECONDARY-ELECTRON SCATTERING ON SECONDARY-EMISSION YIELD CURVES [J].
DIONNE, GF .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) :5361-5364
[8]   ORIGIN OF SECONDARY-ELECTRON-EMISSION YIELD-CURVE PARAMETERS [J].
DIONNE, GF .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3347-3351
[9]   ELECTRIC-FIELD DEPENDENCE OF SURFACE DIPOLE OF SEMICONDUCTORS [J].
FISCHER, TE ;
VILJOEN, PE .
PHYSICAL REVIEW LETTERS, 1971, 26 (10) :549-&
[10]   FAST, ACCURATE SECONDARY-ELECTRON YIELD MEASUREMENTS AT LOW PRIMARY ENERGIES [J].
HENRICH, VE .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (04) :456-462